Login  /   中文       
2017
2017/06/07



下載檔案 - 0206_tsmc_A 7nm CMOS Platform Technology Featuring 4th Generation FinFET....pdf
下載檔案 - Intel_14 nm FinFET_2.pdf
下載檔案 - 2801_SamSung_A novel tensile Si (n) and compressive SiGe (p) dual-channe....pdf
下載檔案 - S03P01_TSMC_16+_An Enhanced 16nm CMOS Technology Featuring 2nd Generation FinFET Transistors and Advanced Culow-k Interconnect for Low Power and High Performance Applications.PDF
下載檔案 - S03P01_TSMC_16+_An Enhanced 16nm CMOS Technology Featuring 2nd Generatio....pdf
下載檔案 - S09P05_TSMC_Ge n-channel FinFET with optimized gate stack and contacts.PDF
下載檔案 - S03P07_Intel_A 14nm Logic Technology Featuring 2nd-Generation FinFET , A....pdf
下載檔案 - S09P05_TSMC_Ge n-channel FinFET with optimized gate stack and contacts[1].pdf
下載檔案 - S09P04_TSMC_InAlP-Capped (100) Ge nFETs with 1.06 nm EOT Achieving Record High Peak Mobility and First Integration on 300 mm Si Substrate.PDF
下載檔案 - S03P07_Intel_A 14nm Logic Technology Featuring 2nd-Generation FinFET , Air-Gapped Interconnects, Self-Aligned Double Patterning and a 0.0588 m2 SRAM cell size.PDF
下載檔案 - S03P01_Intel_22nm_A 22nm SoC Platform Technology Featuring 3-D Tri-Gate and High-kMetal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications.PDF
下載檔案 - 22nm-details_presentation.pdf
下載檔案 - Intel_14 nm FinFET_3.pdf
下載檔案 - Intel_14 nm FinFET_1.pdf
下載檔案 - Intel_45 nm 2D Planar Device Detail.pdf
下載檔案 - S34P01_Intel_CMOS Performance Benching of Si InAs GaAs and Ge nW.PDF
下載檔案 - S34P01_Intel_CMOS Performance Benching of Si InAs GaAs and Ge nW[1].PDF